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Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle.
Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide.
Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g., red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.
Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space = 1.35 kW/m2) efficiencies in excess of 25%.[1]
A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.
Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and the electronic and optical properties of the material.
^Alex Freundlich. "Multi-Quantum Well Tandem Solar Cells". University of Houston Center for Advanced Materials. Archived from the original on 2009-05-10. Retrieved 2008-11-14.
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Indiumgalliumphosphide (InGaP), also called galliumindiumphosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...
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emitter. Quantum dots can be formed in a monolayer of indium arsenide on indiumphosphide or gallium arsenide. The mismatches of lattice constants of the...
post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between...
semiconductors, including indiumgallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single...
phosphide and gallium phosphide. It is used to manufacture light-emitting diodes emitting green light. Aluminium galliumindiumphosphide Light-Emitting Diode...
phosphine upon hydrolysis. Magnesium phosphide (Mg3P2) also is moisture sensitive. Indiumphosphide (InP) and galliumphosphide (GaP) are used as a semi-conductors...
Galliumindium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
such as light-emitting diodes (e.g. aluminium galliumindiumphosphide). Highly poisonous, aluminium phosphide has been used for suicide. Fumigation has also...
(four elements) such as aluminium galliumindiumphosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of III-V...
commercially arrive until the late 1980s. In the late 1980s, Aluminium IndiumGalliumPhosphide LEDs arrived. They provided an efficient source of red and amber...
in the epitaxy tool. For example, indiumgalliumphosphide layers with a band gap above 1.9 eV can be grown on gallium arsenide wafers with index grading...
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
photovoltaic cells. These use a combination of several layers of indiumgalliumphosphide, gallium arsenide and germanium to harvest more energy from the solar...
than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be...
"Applications of photoluminescence excitation spectroscopy to the study of indiumgalliumphosphide alloys". J. Phys. D: Appl. Phys. 3 (9): 1322–1328. Bibcode:1970JPhD...
transistors have become common. Other III-V technologies, such as indiumphosphide (InP), have been shown to offer superior performance to GaAs in terms...
using the nitride based semiconductors. Using one or more alloys of indiumgallium nitride (InGaN), an optical match to the solar spectrum can be achieved...
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which has since been revised. Goldschmidt also synthesized galliumphosphide and gallium arsenide. The Ga-Sb phase equilibria was investigated in 1955...
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