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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Chemical compound
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells[2] and high speed electronics.[3][4]
The bandgap of InN has now been established as ~0.7 eV depending on temperature[5] (the obsolete value is 1.97 eV).
The effective electron mass has been recently determined by high magnetic field measurements,[6][7] m* =0.055 m0.
Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV).
Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved.[citation needed] The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.
Thin layers of InN can be grown using metalorganic chemical vapour deposition (MOCVD).[8]
^Pichugin, I. G.; Tlachala, M. (1978). "Rentgenovsky analiz nitrida indiya" Рентгеновский анализ нитрида индия [X-ray analysis of indium nitride]. Izvestiya Akademii Nauk SSSR: Neorganicheskie Materialy Известия Академии наук СССР: Неорганические материалы (in Russian). 14 (1): 175–176.
^Nanishi, Y.; Araki, T.; Yamaguchi, T. (2010). "Molecular-beam epitaxy of InN". In Veal, T. D.; McConville, C. F.; Schaff, W. J. (eds.). Indium Nitride and Related Alloys. CRC Press. p. 31. ISBN 978-1-138-11672-6.
^Yim, J. W. L.; Wu, J. (2010). "Optical properties of InN and related alloys". In Veal, T. D.; McConville, C. F.; Schaff, W. J. (eds.). Indium Nitride and Related Alloys. CRC Press. p. 266. ISBN 978-1-138-11672-6.
^Christen, Jürgen; Gil, Bernard (2014). "Group III nitrides". Physica Status Solidi C. 11 (2): 238. Bibcode:2014PSSCR..11..238C. doi:10.1002/pssc.201470041.
^Monemar, B.; Paskov, P. P.; Kasic, A. (2005-07-01). "Optical properties of InN—the bandgap question". Superlattices and Microstructures. 38 (1): 38–56. Bibcode:2005SuMi...38...38M. doi:10.1016/j.spmi.2005.04.006. ISSN 0749-6036.
^Goiran, Michel; Millot, Marius; Poumirol, Jean-Marie; Gherasoiu, Iulian; et al. (2010). "Electron cyclotron effective mass in indium nitride". Applied Physics Letters. 96 (5): 052117. Bibcode:2010ApPhL..96e2117G. doi:10.1063/1.3304169.
^Millot, Marius; Ubrig, Nicolas; Poumirol, Jean-Marie; Gherasoiu, Iulian; et al. (2011). "Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy". Physical Review B. 83 (12): 125204. Bibcode:2011PhRvB..83l5204M. doi:10.1103/PhysRevB.83.125204.
^Cite error: The named reference inushima was invoked but never defined (see the help page).
Indiumnitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of...
Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indiumnitride (InN). It is a ternary...
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
Indium aluminium nitride (InAlN) is a direct bandgap semiconductor material used in the manufacture of electronic and photonic devices. It is part of the...
compounds to prevent contact with the atmosphere. Indiumnitride is readily attacked by acids and alkalis. Indium(I) compounds are not common. The chloride,...
splitting using ansa-titanocene(III/IV) triflate complexes". An Indium gallium nitride (InxGa1-xN) photocatalyst achieved a solar-to-hydrogen efficiency...
known, but only the former is commercially important. The nitrides of aluminium, gallium, and indium adopt the hexagonal wurtzite structure in which each atom...
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical...
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals...
switching circuits, and infrared circuits. Semiconducting gallium nitride and indium gallium nitride produce blue and violet light-emitting diodes and diode lasers...
Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic...
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...
g. indium gallium arsenide (InGaAs)) and quaternary alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide...
platforms. Silicon nitride is one of those material platforms, next to, for example, Silicon Photonics and Indium Phosphide. Silicon Nitride photonic integrated...
dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium nitride is also an effective gate...
She remained at Macquarie to do a PhD in physics (1984) investigating indiumnitride, under the supervision of Trevor Tansley. She also spent six months...
compositions include chemical elements such as boron, cadmium, silver, hafnium, or indium, that are capable of absorbing many neutrons without themselves decaying...
optical properties of the material. Gallium phosphide Indium(III) phosphide Indium gallium nitrideIndium gallium arsenide GaInP/GaAs solar cell Alex Freundlich...
Arsenide nitrides or nitride arsenides are compounds containing anions composed of nitride (N3−) and arsenide (As3−). They can be considered as mixed...
AlGaInP is frequently used in LEDs for lighting systems, along with indium gallium nitride (InGaN).[citation needed] A diode laser consists of a semiconductor...
epitaxial layers. Wide-bandgap semiconductors such as gallium nitride and indium gallium nitride are especially promising. In SiGe graded heterostructure transistors...
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