Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Chemical compound
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm.[1] It has a room temperature direct bandgap of approximately 0.73 eV.[1][2][3]
^ abVurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156.
^Dutta, P. S., Bhat, H. L., Kumar, V. (1997). "The physics and technology of gallium antimonide: An emerging optoelectronic material". Journal of Applied Physics. 81 (9): 5821–5870. Bibcode:1997JAP....81.5821D. doi:10.1063/1.365356.
^Madelung, O., Rössler, U., Schulz, M., eds. (2002). "Gallium antimonide (GaSb), direct energy gap". Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–5. doi:10.1007/10832182_229. ISBN 978-3-540-42876-3.
and 28 Related for: Gallium antimonide information
Galliumantimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about...
Gallium arsenide antimonide, also known as galliumantimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates...
suitable materials. In the case of TPV most research has focused on galliumantimonide (GaSb), although germanium (Ge) is also suitable. Another problem...
Aluminium galliumantimonide, also known as gallium aluminium antimonide or AlGaSb (AlxGa1-xSb), is a ternary III-V semiconductor compound. It can be considered...
Gallium indium antimonide, also known as indium galliumantimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be...
with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and galliumantimonide (GaSb). These compounds have the same structure...
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of...
contains six intermetallics. Like indium antimonide, aluminium antimonide, and galliumantimonide, it is a semiconducting intermetallic compound. It is used...
trioxide. Galliumantimonide Indium antimonide Aluminium arsenide K Seeger and E Schonherr "Microwave dielectric constant of aluminium antimonide" Semicond...
Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...
epitaxy and metalorganic chemical vapor deposition on gallium arsenide and galliumantimonide substrates. It is typically incorporated into layered heterostructures...
creates the critical direct bandgap property. Gallium arsenide, indium phosphide, galliumantimonide, and gallium nitride are all examples of compound semiconductor...
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure...
phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide and galliumantimonide substrates. It is often incorporated into layered heterostructures...
with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and galliumantimonide (GaSb). These compounds have the same structure...
beam epitaxy and metalorganic chemical vapor deposition on gallium arsenide, galliumantimonide and indium arsenide substrates. It is typically incorporated...
efficiency of 35.9% (claimed to be a record). Indium gallium phosphide Gallium indium arsenide antimonide phosphide Solar cell efficiency "Fraunhofer ISE achieves...
emission by semiconductor diodes made from crystals of gallium arsenide (GaAs), galliumantimonide (GaSb), and indium phosphide (InP). GaAs, GaSb, and InP...
of gallium arsenide (GaAs) and indium phosphide (InP) substrates as well as adding capabilities for galliumantimonide (GaSb) and indium antimonide (InSb)...
is 0.6101 nm, allowing it to be grown with or on aluminium antimonide, galliumantimonide, indium arsenide, and lead selenide. With some lattice mismatch...
heterostructures composed of layers of indium arsenide (InAs), galliumantimonide (GaSb), aluminum antimonide (AlSb), and related alloys. These lasers are similar...
metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between the two...
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