Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy.
InxGa1−xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN.
The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.[1]
^Linti, G. "The Group 13 Metals Aluminium, Gallium, Indium and Thallium. Chemical Patterns and Peculiarities. Edited by Simon Aldridge and Anthony J. Downs.Angew. Chem". Angewandte Chemie International Edition. 50: 11569. doi:10.1002/anie.201105633.
and 25 Related for: Indium gallium nitride information
circuits. Semiconducting galliumnitride and indiumgalliumnitride produce blue and violet light-emitting diodes and diode lasers. Gallium is also used in the...
into developing solar cells using the nitride based semiconductors. Using one or more alloys of indiumgalliumnitride (InGaN), an optical match to the solar...
Galliumnitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
Indiumgallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic...
Indiumgallium phosphide (InGaP), also called galliumindium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...
Aluminium galliumindium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction...
semiconductor lasers based on quantum wells of gallium(III) nitride at 380-417nm or indiumgalliumnitride at 450 nm diode-pumped solid-state infrared lasers...
known, but only the former is commercially important. The nitrides of aluminium, gallium, and indium adopt the hexagonal wurtzite structure in which each atom...
splitting using ansa-titanocene(III/IV) triflate complexes". An Indiumgalliumnitride (InxGa1-xN) photocatalyst achieved a solar-to-hydrogen efficiency...
post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between...
Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide...
epitaxial optoelectronic devices based other semiconductors, such as indiumgallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
phosphide / indiumgallium arsenide are used for the epitaxial layers. Wide-bandgap semiconductors such as galliumnitride and indiumgalliumnitride are especially...
semiconductors, including indiumgallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single...
quaternary alloys (four elements) such as aluminium galliumindium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties...
announced the development of the blue (and later green) LED based on IndiumGalliumNitride, that possibilities opened for big LED video displays. The entire...
Following the first report of electrical injection microLEDs based on indiumgalliumnitride (InGaN) semiconductors by the research group of Hongxing Jiang and...
operate in the ultraviolet using galliumnitride based semiconductors and, using the alloy aluminium galliumnitride, wavelengths as short as 250 nm have...
semiconductors, being an alloy of indiumnitride and aluminium nitride, and is closely related to the more widely used galliumnitride. It is of special interest...
than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be...
activity and toxicity of salts of inorganic group 3a metals: aluminum, gallium, indium, and thallium". Proc Natl Acad Sci USA. 68 (7): 1623–1626. Bibcode:1971PNAS...
phosphide. Due to different properties of the active regions, galliumnitride and indiumgalliumnitride are virtually insensitive to this kind of defect. Electromigration:...