Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Chemical compound
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.[5]
Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature.
Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making diode lasers.
InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as a terahertz radiation source as it is a strong photo-Dember emitter.
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to the formation of the quantum dots.[6] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.
^ abHaynes, p. 4.66
^Haynes, pp. 12.157
^Haynes, p. 5.22
^ abcd"Indium Arsenide". American Elements. Retrieved October 12, 2018.
^ "Thermal properties of Indium Arsenide (InAs)". Retrieved 2011-11-22.
^ "oe magazine - eye on technology". Archived from the original on 2006-10-18. Retrieved 2011-11-22.
Indiumarsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals...
Indium gallium arsenide (InGaAs) (alternatively gallium indiumarsenide, GaInAs) is a ternary alloy (chemical compound) of indiumarsenide (InAs) and gallium...
epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
Aluminium indiumarsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a ternary III-V semiconductor compound with very nearly the same...
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide,...
Indiumarsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered...
including indium gallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals...
Indiumarsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been used as blocking layers for semiconductor laser structures...
of quantum dots grown with this method are indium gallium arsenide (InGaAs) quantum dots in gallium arsenide (GaAs). Such quantum dots have the potential...
group 5 element in the III-V semiconductors gallium arsenide, indiumarsenide, and aluminium arsenide. The valence electron count of GaAs is the same as...
Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds...
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...
Manganese-doped indiumarsenide and gallium arsenide (GaMnAs), with Curie temperature around 50–100 K and 100–200 K, respectively Manganese-doped indium antimonide...
Gallium indiumarsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
properties of the material. Gallium phosphide Indium(III) phosphide Indium gallium nitride Indium gallium arsenide GaInP/GaAs solar cell Alex Freundlich. "Multi-Quantum...
epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered...
itself, lead(II) nitrate, many compound semiconductors (such as gallium arsenide and cadmium telluride), and a wide array of other binary compounds.[citation...
alternating pattern creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples...
a wide range of narrow gap semiconductors including indium antimonide (3-5 μm), indiumarsenide, mercury cadmium telluride (MCT) (1-2 μm, 3-5 μm, 8-12...
recently in a review. Indium gallium phosphide Indium gallium arsenide Linti, G. "The Group 13 Metals Aluminium, Gallium, Indium and Thallium. Chemical...
Service, part of the Indian Engineering Services exam conducted by UPSC. Indiumarsenide, a semiconductor Institute of Native American Studies, at the University...
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