Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Chemical compound
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[6]
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
^ abcdHaynes, p. 4.64
^Blakemore, J. S. "Semiconducting and other major properties of gallium arsenide", Journal of Applied Physics, (1982) vol 53 Nr 10 pages R123-R181
^Haynes, p. 12.90
^ abHaynes, p. 12.86
^ abHaynes, p. 12.81
^Cite error: The named reference Moss was invoked but never defined (see the help page).
of 37.0 °C (98.6 °F). Gallium is predominantly used in electronics. Galliumarsenide, the primary chemical compound of gallium in electronics, is used...
Aluminium galliumarsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs...
Galliumarsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of galliumarsenide and gallium phosphide. It exists in various composition...
solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), galliumarsenide (GaAs), and germanium (Ge) p–n junctions, are increasing...
at much higher temperatures and work at much higher voltages than galliumarsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
crystals with a melting point of 942 °C. Indium arsenide is similar in properties to galliumarsenide and is a direct bandgap material, with a bandgap...
Galliumarsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates...
between different semiconductor materials) of aluminium galliumarsenide (AlGaAs)-galliumarsenide (GaAs) which has twice the electron mobility of a GaAs-metal...
limit for efficiency of the GaSb cell in this setup is 52%. Indium galliumarsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
devices. It is also a component of the III–V compound semiconductor galliumarsenide. Arsenic and its compounds, especially the trioxide, are used in the...
creates the critical direct bandgap property. Galliumarsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...
germanium, galliumarsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, galliumarsenide is the second-most...
power-conversion efficiency to 5.2%. Under the right conditions, a galliumarsenide cell can produce an efficiency of around 22%. This is considered an...
Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as galliumarsenide and aluminium galliumarsenide and wider...
diodes are made of silicon, but other semiconducting materials such as galliumarsenide and germanium are also used. The obsolete thermionic diode is a vacuum...
semiconductors have both advantages and disadvantages. For example, galliumarsenide (GaAs) has six times higher electron mobility than silicon, which allows...
include silicon, galliumarsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum galliumarsenide / galliumarsenide, and indium...
optoelectronic devices based other semiconductors, such as indium galliumarsenide. The devices include pseudomorphic heterojunction bipolar transistors...
silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or galliumarsenide (GaAs). Solar cells made with newer, less established...
technology. The main application of black silicon is solar energy. Black GalliumArsenide with light trapping properties have been also produced by MACE. Huang...
Because germanium and galliumarsenide have nearly identical lattice constant, germanium substrates can be used to make gallium-arsenide solar cells. Germanium...
metal arsenides gives arsine: Na3As + 3 H2O → AsH3 + 3 NaOH Many arsenides of the group 13 elements (group III) are valuable semiconductors. Gallium arsenide...
brightness since the 1960s. It is used standalone or together with galliumarsenide phosphide. Pure GaP LEDs emit green light at a wavelength of 555 nm...
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