Gallium indium arsenide antimonide phosphide information
Semiconductor material
Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material.
Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodes[1][2] and thermophotovoltaic cells.[3]
GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The exact composition can be tuned in order to make it lattice matched. The presence of five elements in the alloy allows extra degrees of freedom, making it possible to fix the lattice constant while varying the bandgap. E.g. Ga0.92In0.08P0.05As0.08Sb0.87 is lattice matched to InAs.[2]
^Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) doi:10.1063/1.2741147
^ abLattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) doi:10.1134/1.1500478
^Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534-537 (2011) doi:10.1016/j.solmat.2010.08.036
and 28 Related for: Gallium indium arsenide antimonide phosphide information
including indiumgalliumarsenide, aluminum galliumarsenide and others. In the compound, gallium has a +3 oxidation state. Galliumarsenide single crystals...
Quantum dots can be formed in a monolayer of indiumarsenide on indiumphosphide or galliumarsenide. The mismatches of lattice constants of the materials...
epitaxy (MOVPE) and liquid phase epitaxy (LPE) on galliumarsenide, galliumantimonide and indiumphosphide substrates. It is often incorporated into layered...
heteroepitaxy on indiumarsenide, galliumantimonide and other materials. Aluminium galliumindiumphosphideGalliumindiumarsenideantimonidephosphide Shur, Michael;...
Indiumgalliumarsenidephosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of galliumarsenide, galliumphosphide, indium...
Galliumphosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure...
transistors, and thermophotovoltaic systems. Aluminium antimonideIndiumantimonideGalliumarsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001)...
metalorganic vapour-phase epitaxy of thin films of galliumarsenide, indiumgalliumphosphide, or indiumgalliumarsenide. The Mars Exploration Rovers and several...
limit for efficiency of the GaSb cell in this setup is 52%. Indiumgalliumarsenideantimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
using the nitride based semiconductors. Using one or more alloys of indiumgallium nitride (InGaN), an optical match to the solar spectrum can be achieved...
with phosphorus, arsenic, and antimony: galliumphosphide (GaP), galliumarsenide (GaAs), and galliumantimonide (GaSb). These compounds have the same structure...
at much higher temperatures and work at much higher voltages than galliumarsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
creates the critical direct bandgap property. Galliumarsenide, indiumphosphide, galliumantimonide, and gallium nitride are all examples of compound semiconductor...
zincblende itself, lead(II) nitrate, many compound semiconductors (such as galliumarsenide and cadmium telluride), and a wide array of other binary compounds...
coefficient (3.85×10−6/K), and heat capacity. It can be alloyed with galliumarsenide to produce ternary and quaternary semiconductors. BAs has high electron...
and compound semiconductor materials based on galliumarsenide (GaAs), indiumphosphide (InP), gallium nitride (GaN) and silicon.[citation needed] The...
also been fabricated from SiC. Various indium compounds (indiumarsenide, indiumantimonide, and indiumphosphide) are also being used in LEDs and solid-state...
yttrium nitride, calcium phosphide, sodium arsenide, indiumantimonide, and even double salts like aluminum galliumindiumphosphide. These include III-V...
pnictides – aluminium nitride (AlN), aluminium phosphide (AlP), aluminium arsenide (AlAs), and aluminium antimonide (AlSb) – are known. They are all III-V semiconductors...
semiconductor diodes made from crystals of galliumarsenide (GaAs), galliumantimonide (GaSb), and indiumphosphide (InP). GaAs, GaSb, and InP are examples...
Global Information