Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers,[1] photodetectors[2] and thermophotovoltaic cells.[3]
InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.[4]
^Shur, Michael; Suris, R. A. (2020). Compound semiconductors 1996 : proceedings of the twenty-third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996. Boca Raton. p. 552. ISBN 978-1-000-15712-3. OCLC 1222799133.{{cite book}}: CS1 maint: location missing publisher (link)
^Rogalski, Antoni (2011). Infrared detectors. Boca Raton, FL: CRC Press. p. 346. ISBN 978-1-4200-7672-1. OCLC 690115516.
^Martí, Antonio; Luque, A. (2004). Next generation photovoltaics : high efficiency through full spectrum utilization. Bristol: Institute of Physics. p. 265. ISBN 978-1-4200-3386-1. OCLC 80745662.
^Kuech, Tom (2014). Handbook of crystal growth. Vol. III, Thin films and epitaxy: basic techniques. Burlington: Elsevier Science. p. 267. ISBN 978-0-444-63305-7. OCLC 913620060.
and 28 Related for: Indium arsenide antimonide phosphide information
Indiumphosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical...
Indiumarsenideantimonidephosphide (InAsSbP) is a semiconductor material. InAsSbP has been used as blocking layers for semiconductor laser structures...
Quantum dots can be formed in a monolayer of indiumarsenide on indiumphosphide or gallium arsenide. The mismatches of lattice constants of the materials...
Gallium indiumarsenideantimonidephosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
efficiency of 35.9% (claimed to be a record). Indium gallium phosphide Gallium indiumarsenideantimonidephosphide Solar cell efficiency "Fraunhofer ISE achieves...
Indiumantimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...
(four elements) such as aluminium gallium indiumphosphide (AlInGaP)) alloy and Indiumarsenideantimonidephosphide (InAsSbP). The properties of III-V compound...
(MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indiumphosphide substrates. It is often incorporated into layered...
limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenideantimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure...
brightness since the 1960s. It is used standalone or together with gallium arsenidephosphide. Pure GaP LEDs emit green light at a wavelength of 555 nm. Nitrogen-doped...
Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds...
transistors, and thermophotovoltaic systems. Aluminium antimonideIndiumantimonide Gallium arsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001)...
Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of...
silicon and compound semiconductor materials based on gallium arsenide (GaAs), indiumphosphide (InP), gallium nitride (GaN) and silicon.[citation needed]...
creates the critical direct bandgap property. Gallium arsenide, indiumphosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...
much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
yttrium nitride, calcium phosphide, sodium arsenide, indiumantimonide, and even double salts like aluminum gallium indiumphosphide. These include III-V...
also been fabricated from SiC. Various indium compounds (indiumarsenide, indiumantimonide, and indiumphosphide) are also being used in LEDs and solid-state...
semiconductor diodes made from crystals of gallium arsenide (GaAs), gallium antimonide (GaSb), and indiumphosphide (InP). GaAs, GaSb, and InP are examples of...
first mono-crystalline indiumantimonide with the highest purification 1962: Made the first mono-crystalline gallium arsenide 1963: Made the first semiconductor...