Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.
Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with nitrogen (GaAsP:N).[1]
^Tadashige Sato and Megumi Imai (2002). "Characteristics of Nitrogen-Doped GaAsP Light-Emitting Diodes". Japanese Journal of Applied Physics. 41 (10): 5995–5998. Bibcode:2002JaJAP..41.5995S. doi:10.1143/JJAP.41.5995. S2CID 119751060.
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Galliumarsenidephosphide (GaAs1−xPx) is a semiconductor material, an alloy of galliumarsenide and galliumphosphide. It exists in various composition...
Galliumphosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure...
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lasers. AlGaInP is typically grown by heteroepitaxy on galliumarsenide or galliumphosphide substrates in order to form a quantum well structure that...
(four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of III-V...
metalorganic vapour-phase epitaxy of thin films of galliumarsenide, indium galliumphosphide, or indium galliumarsenide. The Mars Exploration Rovers and several...
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or galliumarsenide. The mismatches of lattice constants of the materials...
at much higher temperatures and work at much higher voltages than galliumarsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
epitaxy (MOVPE) and liquid phase epitaxy (LPE) on galliumarsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered...
phosphine upon hydrolysis. Magnesium phosphide (Mg3P2) also is moisture sensitive. Indium phosphide (InP) and galliumphosphide (GaP) are used as a semi-conductors...
and these are called arsenides. They exist with many stoichiometries, and in this respect arsenides are similar to phosphides. The group 1 alkali metals...
creates the critical direct bandgap property. Galliumarsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...
mass production of (visible) light-emitting diodes (LEDs), using galliumarsenidephosphide. From 1968 to 1970, sales doubled every few months. Their products...
program that provided a base technology for galliumarsenide, galliumarsenidephosphide and indium arsenide devices. These devices became the core technology...
conductivity of ~ 460 W/(m·K) at room temperature Boron arsenide Boron nitride Aluminium phosphideGalliumphosphide Madelung, O. (2004). Semiconductors: Data Handbook...
work has been performed on quantum-well lasers based on galliumarsenide and indium phosphide wafers. Today, however, lasers utilizing quantum wells and...
which has since been revised. Goldschmidt also synthesized galliumphosphide and galliumarsenide. The Ga-Sb phase equilibria was investigated in 1955 by...
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