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Gallium indium antimonide information


Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be considered as an alloy between gallium antimonide and indium antimonide. The alloy can contain any ratio between gallium and indium. GaInSb refers generally to any composition of the alloy.

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Gallium indium antimonide

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Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be...

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Gallium antimonide

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and transistors, and thermophotovoltaic systems. Aluminium antimonide Indium antimonide Gallium arsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001)...

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Gallium arsenide antimonide

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epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into...

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Gallium

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gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminium, indium, and thallium). Elemental gallium is...

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Thermophotovoltaic energy conversion

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limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...

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Gallium indium arsenide antimonide phosphide

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Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...

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Indium

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post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between...

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Indium arsenide antimonide

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Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered...

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Indium arsenide antimonide phosphide

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heteroepitaxy on indium arsenide, gallium antimonide and other materials. Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide Shur...

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Indium arsenide

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Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide...

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Indium nitride

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using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved...

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Indium phosphide

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epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...

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Indium gallium arsenide phosphide

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efficiency of 35.9% (claimed to be a record). Indium gallium phosphide Gallium indium arsenide antimonide phosphide Solar cell efficiency "Fraunhofer ISE...

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Aluminium indium antimonide

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Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb (AlxIn1-xSb), is a ternary III-V semiconductor compound. It can be considered...

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Gallium arsenide

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semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single...

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Gallium nitride

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Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...

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Aluminium antimonide

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trioxide. Gallium antimonide Indium antimonide Aluminium arsenide K Seeger and E Schonherr "Microwave dielectric constant of aluminium antimonide" Semicond...

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Zinc antimonide

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Zinc antimonide (ZnSb), (Zn3Sb2), (Zn4Sb3) is an inorganic chemical compound. The Zn-Sb system contains six intermetallics. Like indium antimonide, aluminium...

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Gallium arsenide phosphide

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(GaAsP:N). Gallium arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige...

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Gallium compounds

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than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be...

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List of semiconductor materials

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alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of...

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Infrared detector

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antimony, indium, cadmium, selenium and others. Lead(II) sulfide (PbS) Mercury cadmium telluride (Known as MCT, HgCdTe) Indium antimonide (InSb) Indium arsenide...

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List of inorganic compounds

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sulfate – In2(SO4)3 Indium antimonide – InSb Indium arsenide – InAs Indium nitride – InN Indium phosphide – InP Indium(I) iodide – InI Indium(III) nitrate –...

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Aluminium arsenide antimonide

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epitaxy and metalorganic chemical vapor deposition on gallium arsenide, gallium antimonide and indium arsenide substrates. It is typically incorporated into...

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Gallium phosphide

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Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure...

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Cubic crystal system

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Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...

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IQE

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of gallium arsenide (GaAs) and indium phosphide (InP) substrates as well as adding capabilities for gallium antimonide (GaSb) and indium antimonide (InSb)...

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Antimony

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Antimony forms antimonides with metals, such as indium antimonide (InSb) and silver antimonide (Ag 3Sb). The alkali metal and zinc antimonides, such as Na3Sb...

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Semiconductor device

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have also been fabricated from SiC. Various indium compounds (indium arsenide, indium antimonide, and indium phosphide) are also being used in LEDs and...

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Laser diode

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creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...

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