Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be considered as an alloy between gallium antimonide and indium antimonide. The alloy can contain any ratio between gallium and indium. GaInSb refers generally to any composition of the alloy.
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Galliumindiumantimonide, also known as indiumgalliumantimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be...
and transistors, and thermophotovoltaic systems. Aluminium antimonideIndiumantimonideGallium arsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001)...
epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, galliumantimonide and indium phosphide substrates. It is often incorporated into...
gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminium, indium, and thallium). Elemental gallium is...
limit for efficiency of the GaSb cell in this setup is 52%. Indiumgallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
Galliumindium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between...
Indium arsenide antimonide, also known as indiumantimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered...
Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide...
using the nitride based semiconductors. Using one or more alloys of indiumgallium nitride (InGaN), an optical match to the solar spectrum can be achieved...
epitaxial optoelectronic devices based other semiconductors, such as indiumgallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
efficiency of 35.9% (claimed to be a record). Indiumgallium phosphide Galliumindium arsenide antimonide phosphide Solar cell efficiency "Fraunhofer ISE...
Aluminium indiumantimonide, also known as indium aluminium antimonide or AlInSb (AlxIn1-xSb), is a ternary III-V semiconductor compound. It can be considered...
semiconductors, including indiumgallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single...
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
trioxide. GalliumantimonideIndiumantimonide Aluminium arsenide K Seeger and E Schonherr "Microwave dielectric constant of aluminium antimonide" Semicond...
Zinc antimonide (ZnSb), (Zn3Sb2), (Zn4Sb3) is an inorganic chemical compound. The Zn-Sb system contains six intermetallics. Like indiumantimonide, aluminium...
than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be...
alloys (four elements) such as aluminium galliumindium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of...
epitaxy and metalorganic chemical vapor deposition on gallium arsenide, galliumantimonide and indium arsenide substrates. It is typically incorporated into...
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure...
Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...
of gallium arsenide (GaAs) and indium phosphide (InP) substrates as well as adding capabilities for galliumantimonide (GaSb) and indiumantimonide (InSb)...
Antimony forms antimonides with metals, such as indiumantimonide (InSb) and silver antimonide (Ag 3Sb). The alkali metal and zinc antimonides, such as Na3Sb...
have also been fabricated from SiC. Various indium compounds (indium arsenide, indiumantimonide, and indium phosphide) are also being used in LEDs and...
creates the critical direct bandgap property. Gallium arsenide, indium phosphide, galliumantimonide, and gallium nitride are all examples of compound semiconductor...