Indium arsenide antimonide information

Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered...

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals...

Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been used as blocking layers for semiconductor laser structures...

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...

Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...

epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...

(four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of III-V...

limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...

epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered...

efficiency of 35.9% (claimed to be a record). Indium gallium phosphide Gallium indium arsenide antimonide phosphide Solar cell efficiency "Fraunhofer ISE...

Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be...

metalorganic chemical vapor deposition on gallium arsenide, gallium antimonide and indium arsenide substrates. It is typically incorporated into layered...

(GaAsP:N). Gallium arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige...

trioxide. Gallium antimonide Indium antimonide Aluminium arsenide K Seeger and E Schonherr "Microwave dielectric constant of aluminium antimonide" Semicond....

Aluminium indium antimonide, also known as indium aluminium antimonide or AlInSb (AlxIn1-xSb), is a ternary III-V semiconductor compound. It can be considered...

including indium gallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals...

vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide, or indium gallium arsenide. The Mars Exploration Rovers and several satellites...

Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds...

transistors, and thermophotovoltaic systems. Aluminium antimonide Indium antimonide Gallium arsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001)...

Cadmium telluride, Mercury zinc telluride. Indium antimonide, Indium arsenide, Indium arsenide antimonide, Lead selenide, QWIP Infrared, thermography...

Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of...

sulfate – In2(SO4)3 Indium antimonide – InSb Indium arsenide – InAs Indium nitride – InN Indium phosphide – InP Indium(I) iodide – InI Indium(III) nitrate –...

antimony, indium, cadmium, selenium and others. Lead(II) sulfide (PbS) Mercury cadmium telluride (Known as MCT, HgCdTe) Indium antimonide (InSb) Indium arsenide...

Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider...

Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...

Subsequently, it was studied in semiconductors such as indium antimonide (InSb), germanium (Ge) and indium arsenide (InAs) by workers in West Germany, Ukraine (Institute...

gallium arsenide (GaAs) and indium phosphide (InP) substrates as well as adding capabilities for gallium antimonide (GaSb) and indium antimonide (InSb)...

creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...

indium arsenide and gallium arsenide (GaMnAs), with Curie temperature around 50–100 K and 100–200 K, respectively Manganese-doped indium antimonide,...

much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...