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Indium antimonide
Identifiers
CAS Number
1312-41-0Y
3D model (JSmol)
Interactive image
ChemSpider
2709929Y
ECHA InfoCard
100.013.812
EC Number
215-192-3
PubChem CID
3468413
RTECS number
NL1105000
UNII
CVZ50C0S9OY
UN number
1549
CompTox Dashboard (EPA)
DTXSID40883672
InChI
InChI=1S/In.SbY
Key: WPYVAWXEWQSOGY-UHFFFAOYSA-NY
SMILES
[In]#[Sb]
Properties
Chemical formula
InSb
Molar mass
236.578 g·mol−1
Appearance
Dark grey, metallic crystals
Density
5.7747g⋅cm−3[1]
Melting point
524 °C (975 °F; 797 K)[1]
Band gap
0.17eV
Electron mobility
7.7mC⋅s⋅g−1 (at 27 °C)
Thermal conductivity
180mW⋅K−1⋅cm−1 (at 27 °C)
Refractive index (nD)
4[2]
Structure
Crystal structure
Zincblende
Space group
T2d-F-43m
Lattice constant
a = 0.648 nm
Coordination geometry
Tetrahedral
Thermochemistry[3]
Heat capacity (C)
49.5 J·K−1·mol−1
Std molar entropy (S⦵298)
86.2 J·K−1·mol−1
Std enthalpy of formation (ΔfH⦵298)
−30.5 kJ·mol−1
Gibbs free energy (ΔfG⦵)
−25.5 kJ·mol−1
Hazards
GHS labelling:
Pictograms
[4]
Signal word
Warning
Hazard statements
H302, H332, H411
Precautionary statements
P273
Safety data sheet (SDS)
External SDS
Related compounds
Other anions
Indium nitride Indium phosphide Indium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Yverify (what is YN ?)
Infobox references
Chemical compound
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm.
Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.
^ abHaynes, p. 4.66
^Haynes, pp. 12.156
^Haynes, pp. 5.22
^"Indium Antimonde". American Elements. Retrieved June 20, 2019.
Indiumantimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...
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g. indium gallium arsenide (InGaAs)) and quaternary alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide...
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lasers and transistors, and thermophotovoltaic systems. Aluminium antimonideIndiumantimonide Gallium arsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L....
in Europe due to the RoHS ban on cadmium. Lead sulfide (PbS) and indiumantimonide (InSb) LDRs (light-dependent resistors) are used for the mid-infrared...
Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...
infrared: 3 to 5 μm (defined by the atmospheric window and covered by indiumantimonide, InSb and mercury cadmium telluride, HgCdTe, and partially by lead...
compound semiconductors such as gallium arsenide, β-silicon carbide, and indiumantimonide adopt the analogous zincblende structure, where each atom has nearest...
of Technology in the Netherlands reported an experiment involving indiumantimonide nanowires connected to a circuit with a gold contact at one end and...
nitride, calcium phosphide, sodium arsenide, indiumantimonide, and even double salts like aluminum gallium indium phosphide. These include III-V semiconductors...
based on a wide range of narrow gap semiconductors including indiumantimonide (3-5 μm), indium arsenide, mercury cadmium telluride (MCT) (1-2 μm, 3-5 μm...