The crystal structure of aluminium gallium arsenide is zincblende.
Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs.
The chemical formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.
The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct.
The refractive index is related with the bandgap via the Kramers–Kronig relations and varies between 2.9 (x = 1) and 3.5 (x = 0). This allows the construction of Bragg mirrors used in VCSELs, RCLEDs, and substrate-transferred crystalline coatings.
Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (QWIP).
It is commonly used in GaAs-based red- and near-infra-red-emitting (700–1100 nm) double-hetero-structure laser diodes.
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Aluminiumgalliumarsenide (also galliumaluminiumarsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs...
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at much higher temperatures and work at much higher voltages than galliumarsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
quaternary alloys (four elements) such as aluminiumgallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties...
light-emitting diodes and diode lasers. For example, galliumarsenide, aluminiumgalliumarsenide, and aluminiumarsenide have almost equal lattice constants, making...
Arsenide nitrides or nitride arsenides are compounds containing anions composed of nitride (N3−) and arsenide (As3−). They can be considered as mixed...
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(junction between different semiconductor materials) of aluminiumgalliumarsenide (AlGaAs)-galliumarsenide (GaAs) which has twice the electron mobility of a...
layers. One commonly-used pair of materials is galliumarsenide (GaAs) with aluminiumgalliumarsenide (AlxGa(1-x)As). Each of the junctions between different...
well-characterized members of its group, boron, gallium, indium, and thallium; it is also expected for nihonium. Aluminium can surrender its three outermost electrons...
578–583 Tanaka A (2004). "Toxicity of indium arsenide, galliumarsenide, and aluminiumgalliumarsenide". Toxicology and Applied Pharmacology. 198 (3):...
elements in group 13 of the periodic table, consisting of boron (B), aluminium (Al), gallium (Ga), indium (In), thallium (Tl) and nihonium (Nh). This group...
LEDs, galliumarsenide and aluminiumgalliumarsenide are more susceptible to this than galliumarsenide phosphide and indium phosphide; gallium nitride...
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ISBN 978-3-11-007511-3. Tanaka, A. (2004). "Toxicity of indium arsenide, galliumarsenide, and aluminiumgalliumarsenide". Toxicology and Applied Pharmacology. 198 (3):...
CRC Press. pp. 177–178. ISBN 978-1-4200-1232-3. "NSM Archive - AluminiumGalliumArsenide (AlGaAs) - Band structure and carrier concentration". www.ioffe...
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