350 nm process information

The 350 nanometer process (350 nm process) is a level of semiconductor process technology that was reached in the 1995–1996 timeframe by leading semiconductor...

In semiconductor manufacturing, the "3 nm" process is the next die shrink after the "5 nm" MOSFET (metal–oxide–semiconductor field-effect transistor) technology...

manufacturing, the "2 nm process" is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the "3 nm" process node. The term "2...

defines the "5 nm" process as the MOSFET technology node following the "7 nm" node. In 2020, Samsung and TSMC entered volume production of "5 nm" chips, manufactured...

defines the "10 nanometer process" as the MOSFET technology node following the "14 nm" node. Since at least 1997, "process nodes" have been named purely...

25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end...

nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" (or "20 nm") node. The "14 nm" was so...

In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap...

The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. The typical half-pitch (i.e., half the distance between...

The "32 nm" node is the step following the "45 nm" process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch...

over the previous 130 nm process. Eventually, it was succeeded by smaller process nodes, such as the 65 nm, 45 nm, and 32 nm processes. It was commercialized...

The "28 nm" lithography process is a half-node semiconductor manufacturing process based on a die shrink of the "32 nm" lithography process. It appeared...

Per the International Technology Roadmap for Semiconductors, the 45 nm process is a MOSFET technology node referring to the average half-pitch of a memory...

The 180 nm process is a MOSFET (CMOS) semiconductor process technology that was commercialized around the 1998–2000 timeframe by leading semiconductor...

The 800 nanometer process (800 nm process) is a level of semiconductor process technology that was reached in the 1989–1990 timeframe, by most leading...

The 250 nm process (250 nanometer process or 0.25 μm process) is a level of semiconductor process technology that was reached by most manufacturers in...

The 600 nanometer process (600 nm process) is a level of semiconductor process technology that was reached in the 1994–1995 timeframe, by most leading...

The 130 nanometer (130 nm) process is a level of semiconductor process technology that was reached in the 2000–2001 timeframe by such leading semiconductor...

75 MHz PR31700 was fabricated in a 350 nm process, delivered in a 208-pin LQFP, it operated at 3.3 V and dissipated only 350 mW.[citation needed] RISController...

by the process node name (e.g. 350 nm node); however this trend reversed in 2009. Feature sizes can have no connection to the nanometers (nm) used in...

manufacturing services from 350 nm to 7 nm process technologies. The Financial Times reported that SMIC is expected to offer 5 nm process-node IC manufacturing...

Elpida Memory's 90 nm DDR2 SDRAM process – 2005 IBM PowerPC G5 970MP – 2005 IBM PowerPC G5 970GX – 2005 IBM Waternoose Xbox 360 Processor – 2005 IBM–Sony–Toshiba...

instructions) per core. L2 cache: 256 KB per core. Fabrication process: 45 nm. K-suffix processors have an unlocked multiplier and can be overclocked. Common...

Edition) – 90 nm process technology (3.2 GHz) Variants Pentium 840 EE – 3.20 GHz (2 × 1 MB L2) Presler (Pentium Extreme Edition) – 65 nm process technology...

clock speeds of 400 MHz (base), 2.2 GHz (boost). Fabrication process: TSMC 5 nm FinFET (6 nm FinFET for the I/O and graphics die). v t e Core Complexes...

reduced cost. The chip had an area of 45 mm2 and was fabricated in a 350 nm process. By employing multiplexed address and data lines, it could be packaged...

65 nm process, later using 55 nm process to reduce power consumption and die size (GeForce 8 G8x GPUs only supported PCIe 1.1 and were built on 90 nm process...

converters. On top of that CMOS sensors at the time were produced using a 350-nm process using 3 metal layers. Few layers were used so as to limit height variations...

14 nm 14LPP FinFET process from Samsung Electronics. In 2018 GlobalFoundries developed the 12 nm 12LP node based on Samsung's 14 nm 14LPP process. On...