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22 nm process information


Semiconductor
device
fabrication
MOSFET scaling
(process nodes)
  • 020 µm – 1968
  • 010 µm – 1971
  • 006 µm – 1974
  • 003 µm – 1977
  •  1.5 µm – 1981
  • 001 µm – 1984
  • 800 nm – 1987
  • 600 nm – 1990
  • 350 nm – 1993
  • 250 nm – 1996
  • 180 nm – 1999
  • 130 nm – 2001
  • 090 nm – 2003
  • 065 nm – 2005
  • 045 nm – 2007
  • 032 nm – 2009
  • 028 nm – 2010
  • 022 nm – 2012
  • 014 nm – 2014
  • 010 nm – 2016
  • 007 nm – 2018
  • 005 nm – 2020
  • 003 nm – 2022
Future
  • 002 nm ~ 2024
  • Half-nodes
  • Density
  • CMOS
  • Device (multi-gate)
  • Moore's law
  • Transistor count
  • Semiconductor
  • Industry
  • Nanoelectronics
  • v
  • t
  • e

The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm.[citation needed] It was first demonstrated by semiconductor companies for use in RAM memory in 2008. In 2010, Toshiba began shipping 24 nm flash memory chips, and Samsung Electronics began mass-producing 20 nm flash memory chips. The first consumer-level CPU deliveries using a 22 nm process started in April 2012 with the Intel Ivy Bridge processors.

Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit;[1] neither gate length, metal pitch or gate pitch on a "22nm" device is twenty-two nanometers.[2][3][4][5]

The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this point, possibly disturbing Moore's law.

The 20-nanometre node is an intermediate half-node die shrink based on the 22-nanometre process.

TSMC began mass production of 20 nm nodes in 2014.[6] The 22 nm process was superseded by commercial 14 nm FinFET technology in 2014.

  1. ^ "No More Nanometers – EEJournal". July 23, 2020.
  2. ^ Shukla, Priyank. "A Brief History of Process Node Evolution". design-reuse.com. Retrieved July 9, 2019.
  3. ^ Hruska, Joel. "14nm, 7nm, 5nm: How low can CMOS go? It depends if you ask the engineers or the economists..." ExtremeTech.
  4. ^ "Exclusive: Is Intel Really Starting To Lose Its Process Lead? 7nm Node Slated For Release in 2022". wccftech.com. September 10, 2016.
  5. ^ "Life at 10nm. (Or is it 7nm?) And 3nm - Views on Advanced Silicon Platforms". eejournal.com. March 12, 2018.
  6. ^ "20nm Technology". TSMC. Retrieved June 30, 2019.

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2 nm process

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7 nm process

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14 nm process

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nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" (or "20 nm") node. The "14 nm" was so...

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32 nm process

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The "28 nm" node is an intermediate half-node die shrink based on the "32 nm" process. The "32 nm" process was superseded by commercial "22 nm" technology...

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45 nm process

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Per the International Technology Roadmap for Semiconductors, the 45 nm process is a MOSFET technology node referring to the average half-pitch of a memory...

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28 nm process

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The "28 nm" lithography process is a half-node semiconductor manufacturing process based on a die shrink of the "32 nm" lithography process. It appeared...

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infrastructure. Silvermont is the successor of the Bonnell, using a newer 22 nm process (previously introduced with Ivy Bridge) and a new microarchitecture...

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mentioning Kittson on 14 June 2007. Kittson was supposed to be on a 22 nm process and use the same LGA2011 socket and platform as Xeons. On 31 January...

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1066 MHz FSB) (July 22, 2007) Core 2 Quad Q6600, 2.40 GHz (2×4 MB L2 cache, 1066 MHz FSB) (January 7, 2007) Wolfdale – 45 nm process technology Die shrink...

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Itanium

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2013 January: Intel cancels Kittson as a 22 nm shrink of Poulson, moving it instead to its 32 nm process. November: HP announces that its NonStop servers...

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Nordic Semiconductor

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GlobalFoundries 22FDX® (22 nm) process, nRF54L Series features a new hardware architecture fabricated using TSMC’s 22ULL® (22 nm) process technology. The nRF5340...

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Semiconductor device fabrication

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Xeon Phi

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Radeon 500 series

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a 14 nm FinFET process, developed by Samsung Electronics and licensed to GlobalFoundries. Polaris 30 chips are produced on a 12 nm FinFET process, developed...

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manufacturing services from 350 nm to 7 nm process technologies. The Financial Times reported that SMIC is expected to offer 5 nm process-node IC manufacturing...

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Intel Atom

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unavailable in Atom processors, such as Intel VT virtualization technology and support for ECC memory. On September 4, 2013, Intel launched a 22 nm successor to...

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Rockchip

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40 nm process, it features a quad-core Cortex-A7 CPU up to 1.3 GHz and a Mali-400 MP2 GPU. It is pin-compatible with RK3026 and RK2926. 40 nm process Quad-core...

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