Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a cutting-edge technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses extreme ultraviolet (EUV) light to create intricate patterns on silicon wafers.
As of 2023[update], ASML Holding is the only company that produces and sells EUV systems for chip production, targeting 5 nanometer (nm) and 3 nm process nodes.
The EUV wavelengths that are used in EUVL are near 13.5 nanometers (nm), using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.[1]), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
At the 2019 International Electron Devices Meeting (IEDM), TSMC reported use of EUV for its 5 nm node in contact, via, metal line, and cut layers, where the cuts can be applied to fins, gates or metal lines.[2][3]
At IEDM 2020, TSMC reported its 5 nm node minimum metal pitch to be reduced 30% (to ~28 nm) from that of its 7 nm node,[4] which was 40 nm.[5]
Samsung's 5 nm node is lithographically the same design rule as its 7 nm node, with a minimum metal pitch of 36 nm.[6]
Image formation mechanism in EUV lithography.
EUV multilayer of silicon-based glass spacer and molybdenum reflectors
Absorber
EUV radiation
Resist
Substrate
Secondary electrons
EUV multilayer and absorber constituting mask pattern for imaging a line. EUV radiation reflected from the mask pattern is absorbed in the resist and substrate, producing photoelectrons and secondary electrons. These electrons increase the extent of chemical reactions in the resist. A secondary electron pattern that is random in nature is superimposed on the optical image. The unwanted secondary electron exposure results in loss of resolution, observable line edge roughness and linewidth variation.
^O'Sullivan, Gerry; Li, Bowen; D'Arcy, Rebekah; Dunne, Padraig; Hayden, Paddy; Kilbane, Deirdre; McCormack, Tom; Ohashi, Hayato; O'Reilly, Fergal; Sheridan, Paul; Sokell, Emma; Suzuki, Chihiro; Higashiguchi, Takeshi (2015). "Spectroscopy of highly charged ions and its relevance to EUV and soft x-ray source development". Journal of Physics B: Atomic, Molecular and Optical Physics. 48 (144025): 144025. Bibcode:2015JPhB...48n4025O. doi:10.1088/0953-4075/48/14/144025. S2CID 124221931.
^G. Yeap et al., 36.7,IEDM 2019.
^O. Adan and K. Houchens, Proc. SPIE 10959, 1095904 (2019).
^J. C. Liu et al., IEDM 2020.
^S-Y. Wu et al., IEDM 2016.
^Schor, David (October 19, 2019). "Samsung 5 nm and 4 nm Update".
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