CIGS unit cell. Red = Cu, yellow = Se, blue = In/Ga
Identifiers
CAS Number
12018-95-0(CuInSe2)
ChemSpider
24774055Y[<del.>
chemspider]
Properties
Chemical formula
CuIn1−xGaxSe2
Density
~5.7 g/cm3
Melting point
1,070 to 990 °C (1,960 to 1,810 °F; 1,340 to 1,260 K) (x = 0–1)[1]
Band gap
1.0–1.7 eV (x = 0–1)[1]
Structure
Crystal structure
tetragonal, Pearson symbol tI16 [1]
Space group
I42d
Lattice constant
a = 0.56–0.58 nm (x = 0–1), c = 1.10–1.15 nm (x = 0–1)
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references
Chemical compound
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
^ abcTinoco, T.; Rincón, C.; Quintero, M.; Pérez, G. Sánchez (1991). "Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys". Physica Status Solidi A. 124 (2): 427. Bibcode:1991PSSAR.124..427T. doi:10.1002/pssa.2211240206.
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quaternary alloys (four elements) such as aluminium galliumindium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties...
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