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Silicon carbide color centers information


Schematic diagram
Schematic of the p+–n–n+ SiC diode with a color center in the n-type layer. (2018, I. Khramtsov, A. Vyshnevyy, D. Fedyanin)

Silicon carbide color centers are point defects in the crystal lattice of silicon carbide, which are known as color centers. These color centers have multiple uses, some of which are in photonics, semiconductors, and quantum applications like metrology and quantum communication. Defects in materials have a plethora of applications, but the reason defects, or color centers in silicon carbide are significant is due to many important properties of these color centers. Silicon carbide as a material has second-order nonlinearity, as well as optical transparency and low two-photon absorption. This makes silicon carbide viable to be an alternate platform for many things, including but not limited to nanofabrication, integrated quantum photonics, and quantum systems in large-scale wafers.[1]

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Silicon carbide color centers

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