Silicon Carbide (SiC) Field Emitter made by NIST in 2013. It produces a flow of electrons comparable to thermionic emission but without a need for destructive heat. It was made by etching some material away to make a porous structure with a large surface area. As an electron emission point on an individual spike wears out, another is available to replace it, making the array more durable.[1][2]
A field emitter array (FEA) is a particular form of large-area field electron source. FEAs are prepared on a silicon substrate by lithographic techniques similar to those used in the fabrication of integrated circuits. Their structure consists of many individual, similar, small-field electron emitters, usually organized in a regular two-dimensional pattern. FEAs need to be distinguished from "film" or "mat" type large-area sources, where a thin film-like layer of material is deposited onto a substrate, using a uniform deposition process, in the hope or expectation that (as a result of statistical irregularities in the process) this film will contain a sufficiently large number of individual emission sites.
^swenson (2013-03-05). "New Player in Electron Field Emitter Technology Makes for Better Imaging and Communications". NIST. Retrieved 2021-08-21.
^"Silicon Carbide Field Emitter". NIST. Retrieved 2021-08-21.
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