Method of measuring the microscopic topography of a material
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Topographic (left) and current (right) maps collected with CAFM on a polycrystalline HfO2 stack. The images show very good spatial correlation.
In microscopy, conductive atomic force microscopy (C-AFM) or current sensing atomic force microscopy (CS-AFM) is a mode in atomic force microscopy (AFM) that simultaneously measures the topography of a material and the electric current flow at the contact point of the tip with the surface of the sample. The topography is measured by detecting the deflection of the cantilever using an optical system (laser + photodiode), while the current is detected using a current-to-voltage preamplifier.[1] The fact that the CAFM uses two different detection systems (optical for the topography and preamplifier for the current) is a strong advantage compared to scanning tunneling microscopy (STM). Basically, in STM the topography picture is constructed based on the current flowing between the tip and the sample (the distance can be calculated depending on the current). Therefore, when a portion of a sample is scanned with an STM, it is not possible to discern if the current fluctuations are related to a change in the topography (due to surface roughness) or to a change in the sample conductivity (due to intrinsic inhomogeneities).
The CAFM is usually operated in contact mode; the tip can be kept at one location while the voltage and current signals are applied/read, or it can be moved to scan a specific region of the sample under a constant voltage (and the current is collected). Recently, some manufacturers provide the option of measuring the current in semi-contact mode.[2] The CAFM was first developed by Sean O'Shea and co-workers at the University of Cambridge in 1993,[3] and it is referred to in the literature by several names, including C-AFM, local-conductivity AFM (LC-AFM), conductive probe AFM (CP-AFM), conductive scanning probe microscopy (C-SPM) or conductive scanning force microscopy (C-SFM), although CAFM is the most widespread.
^Lanza, Mario (2017). Conductive Atomic Force Microscopy. Berlin, Germany: Wiley-VCH. p. 400. ISBN 978-3-527-34091-0.
^"PeakForce TUNA - Bruker AFM Probes". www.brukerafmprobes.com. Retrieved 2017-02-04.
^Murrell, M. P.; Welland, M. E.; O'Shea, S. J.; Wong, T. M. H.; Barnes, J. R.; McKinnon, A. W.; Heyns, M.; Verhaverbeke, S. (1993-02-15). "Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy". Applied Physics Letters. 62 (7): 786–788. Bibcode:1993ApPhL..62..786M. doi:10.1063/1.108579. ISSN 0003-6951.
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