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Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask.[1] SAE can be executed in various epitaxial growth methods such as molecular beam epitaxy[2] (MBE), metalorganic vapour phase epitaxy (MOVPE)[1] and chemical beam epitaxy (CBE).[3] By SAE, semiconductor nanostructures such as quantum dots and nanowires can be grown to their designed places.[2]
^ abStringfellow, Gerald B. (2014). Organometallic Vapor-Phase Epitaxy : Theory and Practice. Elsevier Science. ISBN 978-0-08-053818-1. OCLC 1056079789.
^ abAsahi, Hajime Herausgeber. Horikoshi, Yoshiji Herausgeber. (15 April 2019). Molecular Beam Epitaxy : materials and applications for electronics and optoelectronics. ISBN 978-1-119-35501-4. OCLC 1099903600.{{cite book}}: CS1 maint: multiple names: authors list (link)
^Davies, G.J.; Skevington, P.J.; French, C.L.; Foord, J.S. (May 1992). "Selective area growth of III–V compound semiconductors by chemical beam epitaxy". Journal of Crystal Growth. 120 (1–4): 369–375. Bibcode:1992JCrGr.120..369D. doi:10.1016/0022-0248(92)90420-n. ISSN 0022-0248.
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