Non linear piezoelectric effects in polar semiconductors information
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order (or higher) piezoelectric coefficients times products of the strain tensor components. The idea was put forward for zincblende GaAs and InAs semiconductors since 2006, and then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients.[1]
On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms (first order). Indirect experimental evidence of the existence of these effects has been reported in the literature in relation to GaN and InN semiconductor optoelectronic devices.
^Migliorato, Max; et al. (2014). "A Review of Non Linear Piezoelectricity in Semiconductors". AIP Conference Proceedings. 1590 (1): 32–41. Bibcode:2014AIPC.1590...32M. doi:10.1063/1.4870192.
and 18 Related for: Non linear piezoelectric effects in polar semiconductors information
2019-10-06. "1960: Metal Oxide Semiconductor (MOS) Transistor Demonstrated". The Silicon Engine: A Timeline of Semiconductorsin Computers. Computer History...
reduce mobility. Piezoelectric effect can occur only in compound semiconductor due to their polar nature. It is small in most semiconductors but may lead...
crystal of piezoelectric material. Microphones typically need to be connected to a preamplifier before the signal can be recorded or reproduced. In order to...
mobility insemiconductors can be greatly decreased by the formation of polarons. Organic semiconductors are also sensitive to polaronic effects, which...
. Since piezoelectric effect in pyroelectric crystals arises as a result of changes in their spontaneous polarization under external effects (electric...
silicon oxide layers in the semiconductor industry. LPCVD and PECVD method in comparison. Stress prevention. Quartz (SiO2) piezoelectric properties Silica...
atomic force microscopy (AFM) that allows imaging and manipulation of piezoelectric/ferroelectric materials domains. This is achieved by bringing a sharp...
dipole and piezoelectricity due to the imbalance of the electronic wave-function between the dichalcogenides, which are absent in a non-polar TMDs monolayer...
generates a separation of charge in the atoms or molecules of certain materials. All pyroelectric materials are also piezoelectric. The atomic or molecular properties...
fractional-octave-band filters IEC 61261 Piezoelectric ceramic filters for use in electronic equipment – A specification in the IEC quality assessment system...
exchanges energy with one of the polar optical modes of the crystal lattice. These modes are not present in covalent semiconductors. Optical phonons arise from...
circuit technology is based on silicon-based semiconductors which have high productivity inSemiconductor device fabrication due to the use of large single...
non-adhesive bovine serum albumin (BSA) solutions. The microdispenser is a piezoelectric element attached to a push-bar on top of a channel etched in...
Jacques Curie: Piezoelectricity. 1884: Jacobus Henricus van 't Hoff: discovered the laws of chemical dynamics and osmotic pressure in solutions (in his work...
Global Information