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International Electron Devices Meeting information


The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.[1]

IEDM brings together managers, engineers, and scientists from industry, academia, and government around the world to discuss CMOS transistor technology, memory, displays, sensors, MEMS devices, quantum devices, nanoscale devices, optoelectronics, power, process technology, and device modeling and simulation. The conference also encompasses discussions and presentations on devices in silicon, compound and organic semiconductors, and emerging material systems.[2] IEDM has technical paper presentations and plenary presentations, panel sessions, invited talks, and exhibits.

The IEEE IEDM is where "Moore’s Law" got its name, as Gordon Moore first published his predictions in an article in Electronics Magazine in 1965. Ten years later he refined them in a talk at the IEDM, and from that point on people began referring to them as Moore's Law. Moore’s Law states that the complexity of integrated circuits would double approximately every two years.[3][4]

The IEEE International Electron Devices Meeting is sponsored by the Electron Devices Society of the Institute of Electrical and Electronics Engineers (IEEE).

  1. ^ "Conference Reflections". Nature Electronics. 2019-12-16.
  2. ^ Teschler, Lee (2019-12-10). "Researchers find ways to integrate GaN power circuits onto ICs". EE World.
  3. ^ "1965: "Moore's Law" Predicts the Future of Integrated Circuits | The Silicon Engine | Computer History Museum". Computerhistory.org. Retrieved 2017-03-11.
  4. ^ "The economics of chip manufacture on advanced technologies". Newelectronics.co.uk. 2011-07-26. Retrieved 2017-03-11.

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International Electron Devices Meeting

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The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for...

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List of semiconductor scale examples

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"Design of micron MOS switching devices". 1972 International Electron Devices Meeting. 1972 International Electron Devices Meeting. pp. 168–170. doi:10.1109/IEDM...

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Multigate device

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double-gate MOSFET with a 25 nm thick silicon channel". International Electron Devices Meeting. IEDM Technical Digest. pp. 427–430. doi:10.1109/IEDM.1997...

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5 nm process

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2003). Sub-10-nm planar-bulk-CMOS devices using lateral junction control. IEEE International Electron Devices Meeting 2003. pp. 20.7.1–20.7.3. doi:10.1109/IEDM...

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List of IEEE conferences

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International Conference on Software Engineering and Formal Methods International Conference on Web Services International Electron Devices Meeting International...

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Fujio Masuoka

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NOR flash in 1984, and then NAND flash at the IEEE 1987 International Electron Devices Meeting (IEDM) held in San Francisco. Toshiba commercially launched...

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Semiconductor device modeling

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Semiconductor device modeling creates models for the behavior of the electrical devices based on fundamental physics, such as the doping profiles of the devices. It...

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SONOS

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electrically-alterable, non-destructive read-only storage device. 1967 International Electron Devices Meeting. Vol. 13. p. 70. doi:10.1109/IEDM.1967.187833. Brodie...

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Flash memory

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NOR flash in 1984, and then NAND flash at the IEEE 1987 International Electron Devices Meeting (IEDM) held in San Francisco. Toshiba commercially launched...

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7 nm process

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2003). "Sub-10-nm planar-bulk-CMOS devices using lateral junction control". IEEE International Electron Devices Meeting 2003. pp. 20.7.1–20.7.3. doi:10.1109/IEDM...

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Kioxia

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E2PROM cell using triple polysilicon technology". 1984 International Electron Devices Meeting. pp. 464–467. doi:10.1109/IEDM.1984.190752. S2CID 25967023...

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3 nm process

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2003). Sub-10-nm planar-bulk-CMOS devices using lateral junction control. IEEE International Electron Devices Meeting 2003. pp. 20.7.1–20.7.3. doi:10.1109/IEDM...

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Miniaturization

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described the development of miniaturization during the 1975 International Electron Devices Meeting, confirming his earlier predictions. By 2004, electronics...

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Semiconductor device fabrication

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for low power and high performance products. 2015 IEEE International Electron Devices Meeting (IEDM). doi:10.1109/IEDM.2015.7409775. S2CID 35956689. "Integrating...

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180 nm process

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performance 0.25 mu m CMOS technology". Technical Digest., International Electron Devices Meeting. pp. 56–59. doi:10.1109/IEDM.1988.32749. S2CID 114078857...

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Akintunde Akinwande

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as: Device Research Conference, the International Electron Devices Meeting, the International Solid-State Circuits Conference, the International Display...

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Image sensor

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solid state imagers". 1976 International Electron Devices Meeting. Technical Digest International Electron Device Meeting (IEDM), Washington, DC, Dec...

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Electrochemical RAM

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High-Speed, Low-Power Neuromorphic Computing". 2018 IEEE International Electron Devices Meeting (IEDM). pp. 13.1.1–4. doi:10.1109/IEDM.2018.8614551....

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Conference on Computer Vision and Pattern Recognition

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and Machine Intelligence-Technical Community (PAMI-TC) meeting four years before the meeting. CVPR uses a multi-tier double-blind peer review process...

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