Phenomenom involving the change of conductivity in metallic layers
Not to be confused with Colossal magnetoresistance.
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR, which also sets the foundation for the study of spintronics.
The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on spin orientation.
The main application of GMR is in magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices.[1] GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.
In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to a multilayer structure.[2][3]
The founding results of Albert Fert and Peter Grünberg (1988): change in the resistance of Fe/Cr superlattices at 4.2 K in external magnetic field H. The current and magnetic field were parallel to the [110] axis. The arrow to the right shows maximum resistance change. Hs is saturation field.[note 1]
^Reig, Cardoso & Mukhopadhyay 2013.
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