Colossal magnetoresistance (CMR) is a property of some materials, mostly manganese-based perovskite oxides, that enables them to dramatically change their electrical resistance in the presence of a magnetic field. The magnetoresistance of conventional materials enables changes in resistance of up to 5%, but materials featuring CMR may demonstrate resistance changes by orders of magnitude.[1][2]
This technology may find uses in disk read-and-write heads, allowing for increases in hard disk drive data density. However, so far it has not led to practical applications because it requires low temperatures and bulky equipment.[3][4]
^Ramirez, A. P. (1997). "Colossal magnetoresistance". Journal of Physics: Condensed Matter. 9 (39): 8171–8199. Bibcode:1997JPCM....9.8171R. doi:10.1088/0953-8984/9/39/005. S2CID 19951846.
^Rodriguez-Martinez, L.; Attfield, J.P. (1996). "Cation disorder and size effects in magnetoresistive manganese oxide perovskites". Physical Review B. 54 (22): R15622–R15625. Bibcode:1996PhRvB..5415622R. doi:10.1103/PhysRevB.54.R15622. PMID 9985717.
^"Chemists exploring new material with 'next generation' computer hard drive possibilities". The University of Aberdeen News. 27 January 2014.
^Dagotto, Elbio (14 March 2013). "Brief Introduction to Giant Magnetoresistance (GMR)". Nanoscale Phase Separation and Colossal Magnetoresistance: The Physics of Manganites and Related Compounds. Springer Series in Solid-State Sciences. Vol. 136. Springer Science & Business Media. pp. 395–396. doi:10.1007/978-3-662-05244-0_21. ISBN 9783662052440.
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