Potential energy barrier in metal–semiconductor junctions
1N5822 Schottky diode with cut-open packaging. The semiconducting silicon (center) makes a Schottky barrier against one of the metal electrodes, and an ohmic contact against the other electrode.Band diagram for n-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the Schottky barrier height, ΦB, as the difference between the interfacial conduction band edge EC and Fermi level EF. [For a p-type Schottky barrier, ΦB is the difference between EF and the valence band edge EV.]
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor.[1][2]
Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact.
^Tung, Raymond T. (2014). "The physics and chemistry of the Schottky barrier height". Applied Physics Reviews. 1 (1): 011304. Bibcode:2014ApPRv...1a1304T. doi:10.1063/1.4858400. ISSN 1931-9401.
^Schottky barrier tutorial. See also metal–semiconductor junction.
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