Korean-born American engineer and inventor (1931–1992)
In this Korean name, the family name is Kahng.
Dawon Kahng
강대원
Born
(1931-05-04)May 4, 1931[1]
Keijō, Keiki-dō, Korea (today Seoul, South Korea)
Died
May 13, 1992(1992-05-13) (aged 61)[2]
New Brunswick, New Jersey, U.S.
Citizenship
South Korean (renounced) United States
Occupation
Electrical engineer
Known for
MOSFET (MOS transistor) PMOS and NMOS Schottky diode Nanolayer-base transistor Floating-gate MOSFET Floating-gate memory Reprogrammable ROM
Korean name
Hangul
강대원
Hanja
姜大元
Revised Romanization
Gang Dae-won
McCune–Reischauer
Kang Daewŏn
Dawon Kahng (Korean: 강대원; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
Kahng and Atalla later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and nanolayer-base transistors in the early 1960s. Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Min Sze in 1967. Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM (erasable programmable ROM), EEPROM (electrically erasable programmable ROM) and flash memory technologies. Kahng was inducted into the National Inventors Hall of Fame in 2009.
^"Dawon Kahng". National Inventors Hall of Fame. 2009. Archived from the original on 28 March 2009. Retrieved 28 March 2009.
^Daniels, Lee A. (28 May 1992). "New York Times obituary". The New York Times. Archived from the original on 2020-07-26. Retrieved 2017-02-15.
DawonKahng (Korean: 강대원; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics...
field-effect transistor (MOSFET), invented by Mohamed Atalla and DawonKahng at Bell Labs in 1959. Transistors revolutionized the field of electronics...
for inventing the floating-gate MOSFET with Korean electrical engineer DawonKahng in 1967. Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan...
also known as the MOS transistor, was invented by Mohamed Atalla and DawonKahng at Bell Labs in 1959. MOSFETs use even less power, which led to the mass-production...
applications. The MOSFET (MOS transistor) was invented by Mohamed Atalla and DawonKahng at Bell Labs in 1959. The MOSFET was the first truly compact transistor...
field-effect transistor (MOSFET, or MOS transistor) by Mohamed Atalla and DawonKahng at Bell Labs in 1959, and the development of the complementary MOS (CMOS)...
invention of the MOSFET (MOS field-effect transistor) by Mohamed Atalla and DawonKahng in 1959. With its scalability, and much lower power consumption and higher...
transistor, or MOS transistor) was invented by Mohamed M. Atalla and DawonKahng at Bell Labs in 1959, and presented in 1960. RCA Laboratories researchers...
(metal–oxide–semiconductor field-effect transistor) by Mohamed Atalla and DawonKahng at Bell Labs, presented in 1960, Frank Wanlass studied MOSFET structures...
field-effect transistor (MOSFET), invented by Mohamed M. Atalla and DawonKahng at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor...
help of Korean recruit DawonKahng. The MOS field-effect transistor (MOSFET) amplifier was invented by Mohamed Atalla and DawonKahng in 1959. They fabricated...
service opens in Liverpool and Manchester 1959: Mohamed M. Atalla and DawonKahng at Bell Telephone Laboratories invent the metal–oxide–semiconductor field-effect...
Hoover Harold Hopkins Gardiner Greene Hubbard Internet pioneers Bob Kahn DawonKahng Charles K. Kao Narinder Singh Kapany Hedy Lamarr Innocenzo Manzetti Guglielmo...
metal–oxide–semiconductor field-effect transistor (MOSFET) by Mohamed M. Atalla and DawonKahng at Bell Labs. MOSFET scaling, the miniaturisation of MOSFETs on IC chips...
transistor, or MOS transistor) was invented by Mohamed M. Atalla and DawonKahng at Bell Labs in 1959, and demonstrated in 1960. It was the first truly...
technology. The MOSFET, originally invented by Mohamed M. Atalla and DawonKahng at Bell Labs in 1959, was adapted for cellular networks by the early...
field-effect transistor, or MOS transistor) was invented by Mohamed Atalla and DawonKahng at BTL in 1959. It was the first truly compact transistor that could...
digital telephony. The MOSFET was invented by Mohamed M. Atalla and DawonKahng at Bell Telephone Laboratories in 1959, and the metal–oxide–semiconductor...
Hard Townes first described the laser. In 1959, Mohamed M. Atalla and DawonKahng invented the metal-oxide semiconductor field-effect transistor (MOSFET)...
Hoover Harold Hopkins Gardiner Greene Hubbard Internet pioneers Bob Kahn DawonKahng Charles K. Kao Narinder Singh Kapany Hedy Lamarr Innocenzo Manzetti Guglielmo...
Hoover Harold Hopkins Gardiner Greene Hubbard Internet pioneers Bob Kahn DawonKahng Charles K. Kao Narinder Singh Kapany Hedy Lamarr Innocenzo Manzetti Guglielmo...
transistor was successfully fabricated and demonstrated by Mohamed Atalla and DawonKahng in 1960. The main advantage of a MOSFET is that it requires almost no...
Hoover Harold Hopkins Gardiner Greene Hubbard Internet pioneers Bob Kahn DawonKahng Charles K. Kao Narinder Singh Kapany Hedy Lamarr Innocenzo Manzetti Guglielmo...
also known as the MOS transistor, was invented by Mohamed Atalla and DawonKahng at Bell Labs in 1959. The MOSFET made it possible to build high-density...
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