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Magnetoresistive RAM information


Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains.[1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory.[2] Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.

  1. ^ United States 4731757A, "Magnetoresistive memory including thin film storage cells having tapered ends" 
  2. ^ Akerman, J. (2005). "APPLIED PHYSICS: Toward a Universal Memory". Science. 308 (5721): 508–510. doi:10.1126/science.1110549. PMID 15845842. S2CID 60577959.

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