This article is about non-volatile memory utilizing a ferroelectric in the capacitive structure of a DRAM cell. For single transistor Ferrolectric FET memory, see FeFET memory.
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Computer memory and Computer data storage types
General
Memory cell
Memory coherence
Cache coherence
Memory hierarchy
Memory access pattern
Memory map
Secondary storage
MOS memory
floating-gate
Continuous availability
Areal density (computer storage)
Block (data storage)
Object storage
Direct-attached storage
Network-attached storage
Storage area network
Block-level storage
Single-instance storage
Data
Structured data
Unstructured data
Big data
Metadata
Data compression
Data corruption
Data cleansing
Data degradation
Data integrity
Data security
Data validation
Data validation and reconciliation
Data recovery
Storage
Data cluster
Directory
Shared resource
File sharing
File system
Clustered file system
Distributed file system
Distributed file system for cloud
Distributed data store
Distributed database
Database
Data bank
Data storage
Data store
Data deduplication
Data structure
Data redundancy
Replication (computing)
Memory refresh
Storage record
Information repository
Knowledge base
Computer file
Object file
File deletion
File copying
Backup
Core dump
Hex dump
Data communication
Information transfer
Temporary file
Copy protection
Digital rights management
Volume (computing)
Boot sector
Master boot record
Volume boot record
Disk array
Disk image
Disk mirroring
Disk aggregation
Disk partitioning
Memory segmentation
Locality of reference
Logical disk
Storage virtualization
Virtual memory
Memory-mapped file
Software entropy
Software rot
In-memory database
In-memory processing
Persistence (computer science)
Persistent data structure
RAID
Non-RAID drive architectures
Memory paging
Bank switching
Grid computing
Cloud computing
Cloud storage
Fog computing
Edge computing
Dew computing
Amdahl's law
Moore's law
Kryder's law
Volatile
RAM
Hardware cache
CPU cache
Scratchpad memory
DRAM
eDRAM
SDRAM
SGRAM
LPDDR
QDRSRAM
EDO DRAM
XDR DRAM
RDRAM
DDR
GDDR
HBM
SRAM
1T-SRAM
ReRAM
QRAM
Content-addressable memory (CAM)
Computational RAM
VRAM
Dual-ported RAM
Video RAM (dual-ported DRAM)
Historical
Williams–Kilburn tube (1946–1947)
Delay-line memory (1947)
Mellon optical memory (1951)
Selectron tube (1952)
Dekatron
T-RAM (2009)
Z-RAM (2002–2010)
Non-volatile
ROM
Diode matrix
MROM
PROM
EPROM
EEPROM
ROM cartridge
Solid-state storage (SSS)
Flash memory is used in:
Solid-state drive (SSD)
Solid-state hybrid drive (SSHD)
USB flash drive
IBM FlashSystem
Flash Core Module
Memory card
Memory Stick
CompactFlash
PC Card
MultiMediaCard
SD card
SIM card
SmartMedia
Universal Flash Storage
SxS
MicroP2
XQD card
Programmable metallization cell
NVRAM
Memistor
Memristor
PCM (3D XPoint)
MRAM
Electrochemical RAM (ECRAM)
Nano-RAM
CBRAM
Early-stage NVRAM
FeRAM
ReRAM
FeFET memory
Analog recording
Phonograph cylinder
Phonograph record
Quadruplex videotape
Vision Electronic Recording Apparatus
Magnetic recording
Magnetic storage
Magnetic tape
Magnetic-tape data storage
Tape drive
Tape library
Digital Data Storage (DDS)
Videotape
Videocassette
Cassette tape
Linear Tape-Open
Betamax
8 mm video format
DV
MiniDV
MicroMV
U-matic
VHS
S-VHS
VHS-C
D-VHS
Hard disk drive
Optical
3D optical data storage
Optical disc
LaserDisc
Compact Disc Digital Audio (CDDA)
CD
CD Video
CD-R
CD-RW
Video CD
Super Video CD
Mini CD
Nintendo optical discs
CD-ROM
Hyper CD-ROM
DVD
DVD+R
DVD-Video
DVD card
DVD-RAM
MiniDVD
HD DVD
Blu-ray
Ultra HD Blu-ray
Holographic Versatile Disc
WORM
In development
CBRAM
Racetrack memory
NRAM
Millipede memory
ECRAM
Patterned media
Holographic data storage
Electronic quantum holography
5D optical data storage
DNA digital data storage
Universal memory
Time crystal
Quantum memory
UltraRAM
Historical
Paper data storage (1725)
Punched card (1725)
Punched tape (1725)
Plugboard
Drum memory (1932)
Magnetic-core memory (1949)
Plated-wire memory (1957)
Core rope memory (1960s)
Thin-film memory (1962)
Disk pack (1962)
Twistor memory (~1968)
Bubble memory (~1970)
Floppy disk (1971)
v
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e
FeRAM by RamtronFRAM ferroelectric capacitor
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.[1]
FeRAM's advantages over Flash include: lower power usage, faster write speeds[2] and a much greater maximum read/write endurance (about 1010 to 1015 cycles).[3][4] FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures).
Marked disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations and higher cost. Like DRAM, FeRAM's read process is destructive, necessitating a write-after-read architecture.
^"FRAM technology". Cypress semiconductos.
^"FeTRAM: memória não-volátil consome 99% menos energia". 29 September 2011.
FerroelectricRAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...
capacitors are indeed used to make ferroelectricRAM for computers and RFID cards. In these applications thin films of ferroelectric materials are typically used...
are based on dielectric materials. Ferroelectric devices are used in digital electronics as part of ferroelectricRAM, or in analog electronics as tunable...
necessary consequence of ferroelectricity. This can be used to store information in ferroelectric capacitors, elements of ferroelectricRAM. The most common such...
form of NOR flash, OTP ROM, or ferroelectricRAM is also often included on the chip, as well as a small amount of RAM. Microcontrollers are designed for...
titanate (Bi4Ti3O12) ferroelectric, or Pb1−xLnxTiO3 (PLT) and related mixed zirconate/titanates (PLZT). In the late 1980 FerroelectricRAM was developed, using...
(FerroelectricRAM) – One type of nonvolatile RAM. Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory;...
Academy of Music in the University of London FerroelectricRAM, electronic device using the ferroelectric effect to produce low density random access memory...
technologies under development include ferroelectricRAM, programmable metallization cell, Spin-transfer torque magnetic RAM, SONOS, resistive random-access...
millipede memory, Skyrmion, programmable metallization cell, ferroelectricRAM, magnetoresistive RAM, nvSRAM) In development Emerging magnetic data storage...
– a magnetisation that is switchable by an applied magnetic field ferroelectricity – an electric polarisation that is switchable by an applied electric...
accelerometers, gyroscopes actuators, tunable optics, micro pumps, ferroelectricRAM, display systems and smart roads, when energy sources are limited...
nvSRAM BBSRAM FerroelectricRAM Magnetoresistive random-access memory Technique Has non-volatile elements along with high performance SRAM Has a lithium...
magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM) and ferroelectricRAM (FeRAM). Most of these technologies offer densities similar to flash memory...
data in ferroelectric materials; the earliest demonstration of Ferroelectric memory, or FeRAM. This work also demonstrated that ferroelectric materials...
mechanisms responsible for plasticity. Experimental systems based on ferroelectric tunnel junctions have been used to show that STDP can be harnessed from...
elucidated in an article in nature nanotechnology. The ferroelectric memristor is based on a thin ferroelectric barrier sandwiched between two metallic electrodes...
of a microscope probe scanned along a ferroelectric surface is used to study the domain structure of ferroelectric materials. Another example of voltage...
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