GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C.
During writing, the material is erased, initialized into its crystalline state, with low-intensity laser irradiation. The material heats up to its crystallization temperature, but not its melting point, and crystallizes. The information is written at the crystalline phase, by heating spots of it with short (<10 ns), high-intensity laser pulses; the material melts locally and is quickly cooled, remaining in the amorphous phase. As the amorphous phase has lower reflectivity than the crystalline phase, data can be recorded as dark spots on the crystalline background. Recently, novel liquid organogermanium precursors, such as isobutylgermane[1][2][3] (IBGe) and tetrakis(dimethylamino)germane[4][5] (TDMAGe) were developed and used in conjunction with the metalorganics of antimony and tellurium, such as tris-dimethylamino antimony (TDMASb) and di-isopropyl telluride (DIPTe) respectively, to grow GeSbTe and other chalcogenide films of very high purity by metalorganic chemical vapor deposition (MOCVD). Dimethylamino germanium trichloride [6] (DMAGeC) is also reported as the chloride containing and superior dimethylaminogermanium precursor for Ge deposition by MOCVD.
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GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change...
material can exist in the amorphous spots. Another similar material is GeSbTe, offering a lower linear density, but with higher overwrite cycles by 1-2...
Generation-skipping transfer tax, in the United States Generalized suffix tree GeSbTe, a phase-change material GST Computer Systems, a group of British software...
weight of constituent elements; i.e., S > Se > Te. Chalcogenide compounds such as AgInSbTe and GeSbTe are used in rewritable optical disks and phase-change...
the United States, but this is less than 10% of worldwide consumption. GeSbTe is a phase change material used for its optic properties, such as that used...
replacement for lead in many of these applications. Varying compositions of GeSbTe ("GST alloys") and Ag- and In- doped Sb2Te ("AIST alloys"), being examples...
chalcogenides, fluorides, germanates (glasses based on GeO2), tellurites (glasses based on TeO2), antimonates (glasses based on Sb2O3), arsenates (glasses...
Pol; Willens, R. H.; Klement, W. (1960). "Metastable Electron Compound in Ag-Ge Alloys" (PDF). Journal of Applied Physics. 31 (6): 1137. Bibcode:1960JAP....
Press. p. 271. ISBN 978-0-19-510818-7. "1971–1985 Continuing the Tradition". GE Innovation Timeline. General Electric Company. Retrieved 2012-09-28. "About...
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