Epitaxial graphene growth on silicon carbide information
Epitaxial graphene growth on silicon carbide (SiC) by thermal decomposition is a method to produce large-scale few-layer graphene (FLG).
Graphene is one of the most promising nanomaterials for the future because of its various characteristics, like strong stiffness and high electric and thermal conductivity.
Still, reproducible production of Graphene is difficult, thus many different techniques have been developed.
The main advantage of epitaxial graphene growth on silicon carbide over other techniques is to obtain graphene layers directly on a semiconducting or semi-insulating substrate which is commercially available.[1][2]
Claire; Heer, Walt A. de (December 2012). "Epitaxialgrapheneonsiliconcarbide: Introduction to structured graphene" (PDF). MRS Bulletin. 37 (12): 1138–1147...
heterostructure, graphene nanoribbons embedded in hexagonal boron nitride give an example of pendeo-epitaxy. Grain-to-grain epitaxy involves epitaxialgrowth between...
architectures. Research on 2D graphene was thus initiated by experiments onepitaxially grown grapheneon single crystal siliconcarbide. While significant...
zero effective mass. Graphene samples prepared on nickel films, and on both the silicon face and carbon face of siliconcarbide, show the anomalous effect...
City University of New York have shown that sheets of bilayer grapheneonsiliconcarbide temporarily become harder than diamond upon impact with the tip...
specialty glasses. Silicon compounds such as siliconcarbide are used as abrasives and components of high-strength ceramics. Silicon is the basis of the...
and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment ongraphene". Nature Communications. 11 (1): 823. Bibcode:2020NatCo..11...
including exfoliation of graphite flakes to oxidized silicon wafers and epitaxialgrowthonsiliconcarbide. The latter was deemed most promising for large-scale...
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