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Carbon nanotubes in interconnects information


In nanotechnology, carbon nanotube interconnects refer to the proposed use of carbon nanotubes in the interconnects between the elements of an integrated circuit. Carbon nanotubes (CNTs) can be thought of as single atomic layer graphite sheets rolled up to form seamless cylinders. Depending on the direction on which they are rolled, CNTs can be semiconducting or metallic. Metallic carbon nanotubes have been identified[1] as a possible interconnect material for the future technology generations and to replace copper interconnects. Electron transport can go over long nanotube lengths, 1 μm, enabling CNTs to carry very high currents (i.e. up to a current density of 109 A∙cm−2) with essentially no heating due to nearly one dimensional electronic structure.[2] Despite the current saturation in CNTs at high fields,[2] the mitigation of such effects is possible due to encapsulated nanowires.[3]

Carbon nanotubes for interconnects application in Integrated chips have been studied since 2001,[4] however the extremely attractive performances of individual tubes are difficult to reach when they are assembled in large bundles necessary to make real via or lines in integrated chips. Two proposed approaches to overcome the to date limitations are either to make very tiny local connections that will be needed in future advanced chips or to make carbon metal composite structure that will be compatible with existing microelectronic processes.

Hybrid interconnects that employ CNT vias in tandem with copper interconnects may offer advantages in reliability and thermal-management.[5] In 2016, the European Union has funded a four million euro project over three years to evaluate manufacturability and performance of composite interconnects employing both CNT and copper interconnects. The project named CONNECT (CarbON Nanotube compositE InterconneCTs)[6] involves the joint efforts of seven European research and industry partners on fabrication techniques and processes to enable reliable carbon nanotubes for on-chip interconnects in ULSI microchip production.

  1. ^ Kreupl, F; Graham, A.P; Duesberg, G.S; Steinhögl, W; Liebau, M; Unger, E; Hönlein, W (2002). "Carbon nanotubes in interconnect applications". Microelectronic Engineering. 64 (1–4). Elsevier BV: 399–408. arXiv:cond-mat/0412537. doi:10.1016/s0167-9317(02)00814-6. ISSN 0167-9317.
  2. ^ a b Park, Ji-Yong; Rosenblatt, Sami; Yaish, Yuval; Sazonova, Vera; Üstünel, Hande; Braig, Stephan; Arias, T. A.; Brouwer, Piet W.; McEuen, Paul L. (2004). "Electron−Phonon Scattering in Metallic Single-Walled Carbon Nanotubes". Nano Letters. 4 (3). American Chemical Society (ACS): 517–520. arXiv:cond-mat/0309641. Bibcode:2004NanoL...4..517P. doi:10.1021/nl035258c. ISSN 1530-6984. S2CID 32640167.
  3. ^ Vasylenko, Andrij; Wynn, Jamie; Medeiros, Paulo V. C.; Morris, Andrew J.; Sloan, Jeremy; Quigley, David (2017-03-27). "Encapsulated nanowires: Boosting electronic transport in carbon nanotubes". Physical Review B. 95 (12): 121408. arXiv:1611.04867. Bibcode:2017PhRvB..95l1408V. doi:10.1103/PhysRevB.95.121408. S2CID 59023024.
  4. ^ Wei, B. Q.; Vajtai, R.; Ajayan, P. M. (20 August 2001). "Reliability and current carrying capacity of carbon nanotubes". Applied Physics Letters. 79 (8). AIP Publishing: 1172–1174. Bibcode:2001ApPhL..79.1172W. doi:10.1063/1.1396632. ISSN 0003-6951.
  5. ^ Chai, Yang; Chan, Philip C. H. (2008). "High electromigration-resistant copper/carbon nanotube composite for interconnect application". 2008 IEEE International Electron Devices Meeting. IEEE. pp. 1–4. doi:10.1109/iedm.2008.4796764. ISBN 978-1-4244-2377-4.
  6. ^ "CORDIS | European Commission".

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