American physicist, inventor, and eugenicist (1910–1989)
For other uses, see William Shockley (disambiguation).
It has been suggested that Foundation for Research and Education on Eugenics and Dysgenics be merged into this article. (Discuss) Proposed since May 2024.
William Shockley
Shockley in 1975
Born
William Bradford Shockley Jr.
(1910-02-13)February 13, 1910
London, England
Died
August 12, 1989(1989-08-12) (aged 79)
Stanford, California, U.S.
Nationality
American
Alma mater
California Institute of Technology (BS)
Massachusetts Institute of Technology (PhD)
Known for
Point-contact transistor and GJT
Diffused-base transistor
Heterojunction bipolar transistor
Thyristor
BARITT diode
Shockley diode
Junction theory
BJT theory
FET theory
Deathnium
Deep-level trap
Deformation potential theory
Empty lattice approximation
Gradual channel approximation
Lucky electron model
Hot electron theory
Channel length modulation
Process variation
Ion implantation
Low-level injection
Through-silicon via
Transmission line measurement
Shockley diode equation
Shockley–Read–Hall recombination
Shockley partials
Shockley–Ramo theorem
Shockley states
Shockley–James paradox
Shockley–Queisser limit
Haynes–Shockley experiment
Read–Shockley equation
Van Roosbroeck–
Shockley equation
Awards
Medal for Merit (1945)
Morris Liebmann Memorial Prize (1952)
Comstock Prize in Physics (1953)
Oliver E. Buckley Condensed Matter Prize (1953)
Nobel Prize in Physics (1956)
Holley Medal (1963)
Wilhelm Exner Medal (1963)
IEEE Medal of Honor (1980)
Scientific career
Institutions
Bell Labs
Shockley Semiconductor Stanford University
Columbia University
Thesis
Electronic Bands in Sodium Chloride (1936)
Doctoral advisor
John C. Slater
William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American inventor, physicist, and eugenicist. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect".[1]
Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. He recruited brilliant employees, but quickly alienated them with his autocratic and erratic management; they left and founded major companies in the industry.[2]
In his later life, while a professor of electrical engineering at Stanford University and afterward, Shockley became known as a racist and eugenicist.[3][4][5][6][7][8]
^Borrell, Jerry (2001). "They would be gods". Upside. 13 (10): 53 – via ABI/INFORM Global.
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^"Inventors of the transistor followed diverse paths after 1947 discovery". Bangor Daily News. Associated Press. December 26, 1987. Retrieved July 13, 2022. Although he has received less publicity in recent years, his views have become, if anything, more extreme. He suggested in an interview the possibility of bonus payments to black people for undergoing voluntary sterilization.
^Cite error: The named reference :11 was invoked but never defined (see the help page).
^Thorp, H. Holden (November 18, 2022). "Shockley was a racist and eugenicist". Science. 378 (6621): 683. Bibcode:2022Sci...378..683T. doi:10.1126/science.adf8117. ISSN 0036-8075. PMID 36395223. S2CID 253582584.
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