This article is about the manufacturing process. For the song "Silicone on Sapphire" by the Clash, see Sandinista!
Silicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al 2O 3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies.
Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH 4) on heated sapphire substrates. The advantage of sapphire is that it is an excellent electrical insulator, preventing stray currents caused by radiation from spreading to nearby circuit elements. SOS faced early challenges in commercial manufacturing because of difficulties in fabricating the very small transistors used in modern high-density applications. This is because the SOS process results in the formation of dislocations, twinning and stacking faults from crystal lattice disparities between the sapphire and silicon. Additionally, there is some aluminum, a p-type dopant, contamination from the substrate in the silicon closest to the interface.
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industry and for the production of silicononsapphire (SOS) wafers for integrated circuits (RFICs), as well as on high-quality optical and industrial...
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services specialising in the field of power semiconductor devices and silicononsapphire integrated circuit products. The power products they manufacture...
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first implemented with Transistor-transistor logic, and later with SilicononSapphire chips beginning with the Series 33 in 1979. In the early 1980s, HP...
Harold M. Manasevit was the first to document epitaxial growth of silicononsapphire while working at the Autonetics division of North American Aviation...
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