The anomalous photovoltaic effect (APE) is a type of a photovoltaic effect which occurs in certain semiconductors and insulators. The "anomalous" refers to those cases where the photovoltage (i.e., the open-circuit voltage caused by the light) is larger than the band gap of the corresponding semiconductor. In some cases, the voltage may reach thousands of volts.
Although the voltage is unusually high, the short-circuit current is unusually low. Overall, materials that exhibit the anomalous photovoltaic effect have very low power generation efficiencies, and are never used in practical power-generation systems.
There are several situations in which APE can arise.
First, in polycrystalline materials, each microscopic grain can act as a photovoltaic. Then the grains add in series, so that the overall open-circuit voltage across the sample is large, potentially much larger than the bandgap.
Second, in a similar manner, certain ferroelectric materials can develop stripes consisting of parallel ferroelectric domains, where each domain acts like a photovoltaic and each domain wall acts like a contact connecting the adjacent photovoltaics (or vice versa). Again, domains add in series, so that the overall open-circuit voltage is large.[1]
Third, a perfect single crystal with a non-centrosymmetric structure can develop a giant photovoltage. This is specifically called the bulk photovoltaic effect, and occurs because of non-centrosymmetry. Specifically, the electron processes—photo-excitation, scattering, and relaxation—occur with different probabilities for electron motion in one direction versus the opposite direction.[2]
^S.Y. Yang; J. Seidel; S.J. Byrnes; P. Shafer; C.-H. Yang; M.D. Rossell; et al. (2010). "Above-bandgap voltages from ferroelectric photovoltaic devices" (PDF). Nature Nanotechnology. 5 (2): 143–7. Bibcode:2010NatNa...5..143Y. doi:10.1038/nnano.2009.451. PMID 20062051. S2CID 16970573.
^Cite error: The named reference Fridkin1991 was invoked but never defined (see the help page).
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