LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.
The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks,[2][3][4] enabling the majority of the world's cellular voice and data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts.[6] Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.
Manufacturers of LDMOS devices and foundries offering LDMOS technologies include TSMC, LFoundry, Tower Semiconductor, SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semiconductors (including former Freescale Semiconductor), SMIC, MK Semiconductors, Polyfet and Ampleon.
^ abA. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
^Baliga, Bantval Jayant (2005). Silicon RF Power MOSFETS. World Scientific. pp. 1–2. ISBN 9789812561213.
^Asif, Saad (2018). 5G Mobile Communications: Concepts and Technologies. CRC Press. p. 134. ISBN 9780429881343.
^Theeuwen, S. J. C. H.; Qureshi, J. H. (June 2012). "LDMOS Technology for RF Power Amplifiers" (PDF). IEEE Transactions on Microwave Theory and Techniques. 60 (6): 1755–1763. Bibcode:2012ITMTT..60.1755T. doi:10.1109/TMTT.2012.2193141. ISSN 1557-9670. S2CID 7695809.
^"LDMOS Products and Solutions". NXP Semiconductors. Retrieved 4 December 2019.
^van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Radio and Wireless Symposium, 2008 IEEE. Orlando, FL. pp. 69–72. doi:10.1109/RWS.2008.4463430.
needed to withstand high electric fields. The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks...
the LDMOS (lateral diffused MOS), a type of power MOSFET. Hitachi was the only LDMOS manufacturer between 1977 and 1983, during which time LDMOS was used...
Ampleon for US$1.48 billion. Ampleon offers various LDMOS Power Transistors, like the ART2K0TFES, LDMOS Avionics Power Transistors, meant to be used primarily...
particularly LDMOS transistors, as the standard technology for RF power amplifiers by the 1990s, due to the superior RF performance of LDMOS transistors...
introduced the LDMOS (lateral DMOS), a planar type of DMOS. Hitachi was the only LDMOS manufacturer between 1977 and 1983, during which time LDMOS was used...
BCDMOS is a complex circuit composed of Bipolar, CMOS and LDMOS devices. It can also be made with Bipolar, CMOS and DMOS devices. BCDMOS technology allows...
wireless mobile networks, which revolutionised telecommunication systems. The LDMOS in particular is the most widely used power amplifier in mobile networks...
UHF transmitters, LDMOS power transistors are the device of choice for the output stage, with the latest products employing 50V LDMOS devices for higher...
Gyroscope Capacitive touchscreen controller (ASIC and DSP) RF power amplifier (LDMOS) Besides the number keypad and buttons for accepting and declining calls...
Gyroscope Capacitive touchscreen controller (ASIC and DSP) RF power amplifier (LDMOS) Some are also equipped with an FM radio receiver, a hardware notification...
their greater linearity, up until MOSFET devices (such as power MOSFETs, LDMOS and RF CMOS) replaced them for most power electronic applications in the...
T. L. (2014). "Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode". IEEE Electron Device Letters. 35 (11): 1079. Bibcode:2014IEDL...
This compares to 50% before high efficiency switch-mode power supplies and LDMOS amplifiers were used. Efficiency drops dramatically if any digital HD Radio...
the wide adoption of MOSFET-based RF power amplifiers (power MOSFET and LDMOS) and RF circuits (RF CMOS). Wireless networks allowed for public digital...
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