An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher. The main advantage is their high-power capability; single IMPATT diodes can produce continuous microwave outputs of up to 3 kilowatts, and pulsed outputs of much higher power. These diodes are used in a variety of applications from low-power radar systems to proximity alarms. A major drawback of IMPATT diodes is the high level of phase noise they generate. This results from the statistical nature of the avalanche process.
An IMPATTdiode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics...
oscillations (tunnel diodes, Gunn diodes, IMPATTdiodes), and to produce light (light-emitting diodes). Tunnel, Gunn and IMPATTdiodes exhibit negative resistance...
avalanche diodes can act as negative-resistance devices. The IMPATTdiode is an avalanche diode optimized for frequency generation. These are made from doped...
the phase shift and the output power is substantially lower than in an IMPATTdiode. Sze, SM (1981). Physics of Semiconductor Devices. second edition. John...
microwave oscillators, resulting in the discovery of the IMPATTdiode, Gunn diode, TRAPATT diode, and others. In 1969 Kurokawa derived conditions for stability...
in the invention of the IMPATTdiode in 1956 by W.T. Read and Ralph L. Johnston and the Gunn diode in 1962 by J. B. Gunn. Diodes are the most widely used...
with negative resistance, such as magnetron tubes, tunnel diodes, IMPATTdiodes and Gunn diodes. Negative-resistance oscillators are usually used at high...
Nobel Prize in Physics. Today, negative resistance diodes such as the Gunn diode and IMPATTdiode are widely used as microwave oscillators in such devices...
to make amplifiers and oscillators. These include tunnel diodes, Gunn diodes, IMPATTdiodes, magnetron tubes, and unijunction transistors. When an alternating...
resistance in diodes was rediscovered in 1956 in the tunnel diode, and today negative resistance diodes like the Gunn diode and IMPATTdiode are used in...
FETs, SiGe and GaAs heterojunction bipolar transistors/HBTs, HEMTs, IMPATTdiodes, and others, are used especially at lower microwave frequencies and...
high quantum efficiencies using negative resistance, i.e., Gunn or IMPATTdiodes, and this would be viable for short range links. In 2013, inventor Hatem...
(1974), was the IMPISTOR, being a transistor with IMPATT collector-base junction. Avalanche diode "Linear Technology AN47" Archived March 20, 2012, at...
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