The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design.[1] It was developed in the Swiss EPFL by Christian C. Enz, François Krummenacher and Eric A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s.[2] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design.
^Enz, Christian C.; Krummenacher, François; Vittoz, Eric A. (1995), "An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications", Analog Integrated Circuits and Signal Processing Journal on Low-Voltage and Low-Power Design, vol. 8 (published July 1995), pp. 83–114, doi:10.1007/BF01239381, S2CID 110861430
^Enz, Christian C.; Krummenacher, François; Vittoz, Eric A. (1987), "A CMOS Chopper Amplifier", IEEE Journal of Solid-State Circuits, vol. 22, no. 3 (published June 1987), pp. 335–342, Bibcode:1987IJSSC..22..335E, doi:10.1109/JSSC.1987.1052730, S2CID 34431994
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