As transistors become smaller, their power density remains constant
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.[1][2] The law, originally formulated for MOSFETs, is based on a 1974 paper co-authored by Robert H. Dennard, after whom it is named.[3]
^McMenamin, Adrian (April 15, 2013). "The end of Dennard scaling". Retrieved January 23, 2014.
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Streetman, Ben G.; Banerjee, Sanjay Kumar (2016). Solid state electronic devices. Boston: Pearson. p. 341. ISBN 978-1-292-06055-2. OCLC 908999844.
^Dennard, Robert H.; Gaensslen, Fritz H.; Yu, Hwa-Nien; Rideout, V. Leo; Bassous, Ernest; LeBlanc, Andre R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions". IEEE Journal of Solid-State Circuits. SC-9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984. Dennard, Robert H.; Gaensslen, Fritz H.; Yu, Hwa-Nien; Rideout, V. Leo; Bassous, Ernest; LeBlanc, Andre R. (April 1999). "Classic Paper: Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions". Proceedings of the IEEE. 87 (4): 668–678. CiteSeerX 10.1.1.334.2417. doi:10.1109/JPROC.1999.752522. S2CID 62193402.
In semiconductor electronics, Dennardscaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their...
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memory. MOS technology is the basis for modern DRAM. In 1966, Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory....
in the early 1970s. It was used by Yu with Robert H. Dennard to fabricate the first micron-scale MOSFETs (metal–oxide–semiconductor field-effect transistors)...
the US. With Collins leaving the group for Genesis commitments, Kenwood Dennard of Pat Martino's group was recruited in New York City in time for their...
capacitances—both intrinsic and parasitic—that affect dynamic performance. The power scaling which is now a major driving force in the industry is reflected in the...
memory. MOS technology is the basis for modern DRAM. In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory....
incorporating MOSFETs with channel lengths of tens of nanometers. Robert Dennard's work on scaling theory was pivotal in recognising that this ongoing reduction...
CMOS near the limit of bulk CMOS scaling. In addition, he wrote an article on the limits to CMOS transistor scaling, listing factors like quantum mechanical...